Datasheet Summary
STGW30N120KD STGWA30N120KD
30 A, 1200 V short circuit rugged IGBT with Ultrafast diode
Features
- Low on-losses
- High current capability
- Low gate charge
- Short circuit withstand time 10 µs
- IGBT co-packaged with Ultrafast free-wheeling diode
Applications
- Motor control
Description
This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior.
3 2 1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Markings
STGW30N120KD
STGWA30N120KD
GWA30N120KD
Package TO-247 TO-247 long leads
February 2012
Doc ID 14394 Rev...