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GW30N120KD - short circuit rugged IGBT

General Description

This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior.

Figure 1.

Table 1.

Key Features

  • Low on-losses.
  • High current capability.
  • Low gate charge.
  • Short circuit withstand time 10 µs.
  • IGBT co-packaged with Ultrafast free-wheeling diode.

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STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ Motor control Description This high voltage and short-circuit rugged IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behavior. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Markings STGW30N120KD GW30N120KD STGWA30N120KD GWA30N120KD Package TO-247 TO-247 long leads February 2012 Doc ID 14394 Rev 5 Packaging Tube Tube 1/15 www.st.