Order code VDS IRF630 200 V
* Extremely high dv/dt capability
* Very low intrinsic capacitance
* Gate charge minimized RDS(on) max. 0.40 Ω ID 9A D(2, .

* Switching applications G(1) S(3) AM01475v1_noZen Description This Power MOSFET series realized with STMicroelec.

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC con.

IRF630A

IRF630B

IRF630F

IRF630FI

IRF630FP

IRF630M

IRF630MFP

IRF630N

IRF630NL

IRF630NLPBF

IRF630NPBF

IRF630NS

IRF630NSPBF