IRF630B Datasheet - Fairchild Semiconductor

200V N-Channel MOSFET

IRF630B Features

* 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

IRF630B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRF630B Datasheet (859.82 KB)

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Datasheet Details

Part number:

IRF630B

Manufacturer:

Fairchild Semiconductor

File Size:

859.82 KB

Description:

200v n-channel mosfet.

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IRF630B 200V N-Channel MOSFET Fairchild Semiconductor

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IRF630B Features

IRF630B General Description

Datasheet Details

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Description:

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