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IRF630B 200V N-Channel MOSFET

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Description

IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number
IRF630B
Manufacturer
Fairchild Semiconductor
File Size
859.82 KB
Datasheet
IRF630B_FairchildSemiconductor.pdf
Description
200V N-Channel MOSFET

Features

* 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

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200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRF630B-like datasheet