IRF630B datasheet, mosfet equivalent, Fairchild Semiconductor

datasheet Download (Size : 859.82KB)

IRF630B Features and benefits

*
*
*
*
*
* 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested.

IRF630B Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.

Image gallery