L5NK65Z Datasheet - STMicroelectronics

N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET

L5NK65Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltag

L5NK65Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

L5NK65Z Datasheet (119.88 KB)

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L5NK65Z

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STMicroelectronics ↗

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N-channel 650v - 1.5ohm - 4.2a powerflat zener-protected supermeshpower mosfet.
N-CHANNEL 650V - 1.5Ω - 4.2A PowerFLAT™ Zener-Protected SuperMESH™Power MOSFET TYPE STLNK65Z s s s s s s s STL5NK65Z PRELIMINARY DATA VDSS 650 V RD.

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L5NK65Z N-CHANNEL 650V 1.5ohm 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET STMicroelectronics

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L5NK65Z Features

L5NK65Z General Description

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