M29W400B
DESCRIPTION
The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment,
November 1999
TSOP48 (N) 12 x 20 mm
SO44 (M)
FBGA48 (ZA) 8 x 6 solder balls
Figure 1. Logic Diagram
18 A0-A17 W E G RP M29W400T M29W400B
15 DQ0-DQ14 DQ15A- 1 BYTE RB
AI02065
1/34
This is information on a product still in productionbut not remended for new designs.
M29W400T, M29W400B
Figure 2A. TSOP Pin Connections
A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB NC A17 A7 A6 A5 A4 A3 A2 A1 1 48 A16 BYTE VSS DQ15A-...
