M29W400DB Features
* Supply voltage
* VCC = 2.7 V to 3.6 V for Program, Erase and Read
* Access time: 45, 55, 70 ns
* Programming time
* 10 μs per byte/word typical
* 11 memory blocks
* 1 boot block (top or bottom location)
* 2 parameter and 8 main blocks
Datasheet Details
M29W400DB, M29W400DT
Numonyx
705.74 KB
3v supply flash memory.
This datasheet PDF includes multiple part numbers: M29W400DB, M29W400DT.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
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M29W400DT 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory (ST Microelectronics)
M29W400DT 3V supply Flash memory (Numonyx)
M29W400B 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory (ST Microelectronics)
M29W400BB 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory (ST Microelectronics)
M29W400BT 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory (ST Microelectronics)
M29W400FB 4-Mbit Boot Block 3 V Supply Flash memory (Numonyx)
M29W400FT 4-Mbit Boot Block 3 V Supply Flash memory (Numonyx)
M29W400DB Distributor
