M29W004B Datasheet - ST Microelectronics

M29W004B 4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory

The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be .

M29W004T M29W004B 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W004T and M29W004B are replaced respectively by the M29W004BT and M29W004BB 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte Status Register bits and Ready/Busy Output MEMORY BLOCKS Boot Block (Top or Bottom location) .

M29W004B Features

* h 4FFFFh 64K MAIN BLOCK 40000h 3FFFFh 64K MAIN BLOCK 30000h 2FFFFh 64K MAIN BLOCK 20000h 1FF

M29W004B_STMicroelectronics.pdf

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Datasheet Details

Part number:

M29W004B

Manufacturer:

STMicroelectronics ↗

File Size:

222.68 KB

Description:

4 mbit 512kb x8 / boot block low voltage single supply flash memory.

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M29W004B M29W004B Mbit 512Kb Boot Block Low Voltage Single Supply Flash Memory ST Microelectronics

M29W004B Distributor