M29W004B - 4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory
The M29W004 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply.
For Program and Erase operations the necessary high voltages are generated internally.
The device can also be
M29W004T M29W004B 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W004T and M29W004B are replaced respectively by the M29W004BT and M29W004BB 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte Status Register bits and Ready/Busy Output MEMORY BLOCKS Boot Block (Top or Bottom location)
M29W004B Features
* h 4FFFFh 64K MAIN BLOCK 40000h 3FFFFh 64K MAIN BLOCK 30000h 2FFFFh 64K MAIN BLOCK 20000h 1FF
