M29W400DT - 3V supply Flash memory
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6 2 Signal descriptions .
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13 2.1 Address inputs (A0-A17) .
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M29W400DT Features
* Supply voltage
* VCC = 2.7 V to 3.6 V for Program, Erase and Read
* Access time: 45, 55, 70 ns
* Programming time
* 10 μs per byte/word typical
* 11 memory blocks
* 1 boot block (top or bottom location)
* 2 parameter and 8 main blocks
