Datasheet Summary
M29W400BT M29W400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME
- 10µs per Byte/Word typical 11 MEMORY BLOCKS
- 1 Boot Block (Top or Bottom Location)
- 2 Parameter and 8 Main Blocks
44 s s s s
PROGRAM/ERASE CONTROLLER
- Embedded Byte/Word Program algorithm
- Embedded Multi-Block/Chip Erase algorithm
- Status Register Polling and Toggle Bits
- Ready/Busy Output Pin
TSOP48 (N) 12 x 20mm
SO44 (M) s
ERASE SUSPEND and RESUME MODES
- Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s
UNLOCK BYPASS PROGRAM...
