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M36L0T8060B1 - (M36L0T8060B1 / M36L0T8060T1) 256 Mbit Flash memory and 64 Mbit PSRAM

Description

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Features

  • Multichip package.
  • 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory 1 die of 64 Mbit (4 Mb ×16) Pseudo SRAM Supply voltage.
  • VDDF = 1.7 V to 1.95 V.
  • VDDQF = VCCP = 2.7 V to 3.1 V.
  • VPPF = 9 V for fast program Electronic signature.
  • Manufacturer code: 20h.
  • Top device code M36L0T8060T1: 880Dh.
  • Bottom device code M36L0T8060B1: 880Eh Package.

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www.DataSheet4U.com M36L0T8060T1 M36L0T8060B1 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory and 64 Mbit PSRAM, 1.8 V core, 3 V I/O supply, multichip package Features Multichip package ■ 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory 1 die of 64 Mbit (4 Mb ×16) Pseudo SRAM Supply voltage – VDDF = 1.7 V to 1.95 V – VDDQF = VCCP = 2.7 V to 3.
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