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M58LR128FT M58LR128FB
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
FEATURES SUMMARY
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SUPPLY VOLTAGE Figure 1. Package – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ FBGA – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85, 95ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Program VFBGA56 (ZB) MEMORY ORGANIZATION 7.7 x 9mm – Multiple Bank Memory Array: 8 Mbit Banks DataSheet4U.