Datasheet Summary
..
M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL
128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst) 1.8V supply Flash memories
Feature summary
- Supply voltage
- VDD = 1.7V to 2.0V for program, erase and read
- VDDQ = 1.7V to 2.0V for I/O Buffers
- VPP = 9V for fast program Multiplexed address/data Synchronous / Asynchronous Read
- Synchronous Burst Read mode: 66MHz
- Random Access: 85ns (M58LR128GU/L) 90ns (M58LR256GU/L) Synchronous Burst Read Suspend Programming time
- 10µs typical Word program time using Buffer Enhanced Factory Program mand Memory organization
- Multiple Bank Memory Array: 16 Mbit (M58LR256GU/L) or 8 Mbit (M58LR128GU/L) Banks
-...
