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M58LR128GL Datasheet PDF

STMicroelectronics M58LR128GL

128 and 256Mbit 1.8V supply Flash memories

Part No. M58LR128GL
Datasheet M58LR128GL Download
Manufacturer
STMicroelectronics
Description 128 and 256Mbit 1.8V supply Flash memories
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M58LR128GL datasheet page 1 preview
M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit (x16, Mux I/O, Multiple Bank, Multi-Level, Burst) 1.8V supply Flash memories Feature summary
● Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 66MHz – Random Access: 85ns (M58LR128GU/L) 90ns (M58LR256GU/L) Synchronous Burst Read Suspend Programming time – 10µs typical Word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank Memory Array: 16 Mbit (M58LR256GU/L) or 8 Mbit (M58LR128GU/L) Banks – Parameter Blocks (Top or Bottom location) Dual operations – program/erase in one Bank while read in others – No delay between read and write operations Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WP for Block Lock-Down – Absolute Write Protection with VPP = VSS Sec...
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