M58LR128HB Datasheet | STMicroelectronics

.. M58LR128HT M58LR128HB 128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories Features - Supply voltage - VDD = 1.7 V to 2.0 V for program, erase and read - VDDQ = 1.7 V to 2.0 V for I/O Buffers - VPP = 9 V for fast program Synchronous / Asynchronous Read - Synchronous Burst Read mode: 54 MHz - Asynchronous Page Read mode - Random access: 85 ns Synchronous Burst Read Suspend Programming time - 2.5 µs typical word program time using Buffer Enhanced Factory Program mand Memory organization - Multiple Bank memory array: 8 Mbit banks - Parameter Blocks (top or bottom location) Dual operations - program/erase in one Bank while read in...