STMicroelectronics M58LR128GB
128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
- Min Voltage : 1.7V
- Max Voltage : 2V
- Max Operating Temp : 85°C
- Min Operating Temp : -25°C
Source:
Octopart
| Part No. | M58LR128GB |
|---|---|
| Datasheet | M58LR128GB Download |
| Manufacturer |  STMicroelectronics |
| Description | 128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory |
| Buy | Stock & Price |
FEATURES
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● SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Enhanced Factory Program command MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operations BLOCK LOCKING – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WP for Block Lock-Down – Absolute Write Protection with VPP = VSS SECURITY – 64 bit unique device number – 2112 bit user programmable OTP Cells COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK Figure 1. Package FBGA VFBGA56 (ZB) 7.7 x 9mm
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● ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58LR128GT: 88C4h. – Bottom Device Code, M58LR128GB: 88C5h.
