M58LR128GB Datasheet | STMicroelectronics

.. M58LR128GT M58LR128GB 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory Features SUMMARY - - - - - - - - - - SUPPLY VOLTAGE - VDD = 1.7V to 2.0V for program, erase and read - VDDQ = 1.7V to 2.0V for I/O Buffers - VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ - Synchronous Burst Read mode: 54MHz - Asynchronous Page Read mode - Random Access: 85ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME - 10µs typical Word program time using Buffer Enhanced Factory Program mand MEMORY ORGANIZATION - Multiple Bank Memory Array: 8 Mbit Banks - Parameter Blocks (Top or Bottom location) DUAL OPERATIONS - program/erase...