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M58LR128HT Datasheet (m58lr128hx) Flash Memories

Manufacturer: STMicroelectronics

Overview: www.DataSheet4U.com M58LR128HT M58LR128HB 128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

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Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 1.7 V to 2.0 V for I/O Buffers.
  • VPP = 9 V for fast program Synchronous / Asynchronous Read.
  • Synchronous Burst Read mode: 54 MHz.
  • Asynchronous Page Read mode.
  • Random access: 85 ns Synchronous Burst Read Suspend Programming time.
  • 2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multiple Bank memory.

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