Datasheet Summary
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M58LR128FT M58LR128FB
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
Features
SUMMARY
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SUPPLY VOLTAGE Figure 1. Package
- VDD = 1.7V to 2.0V for program, erase and read
- VDDQ = 1.7V to 2.0V for I/O Buffers
- VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ FBGA
- Synchronous Burst Read mode: 54MHz
- Asynchronous Page Read mode
- Random Access: 85, 95ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME
- 10µs typical Word program time using Buffer Program VFBGA56 (ZB) MEMORY ORGANIZATION 7.7 x 9mm
- Multiple Bank Memory Array: 8 Mbit Banks .
- Parameter Blocks (Top or Bottom...