M58LR128FT
Overview
- SUPPLY VOLTAGE Figure
- Package - VDD = 1.7V to 2.0V for program, erase and read - VDDQ = 1.7V to 2.0V for I/O Buffers - VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ FBGA - Synchronous Burst Read mode: 54MHz - Asynchronous Page Read mode - Random Access: 85, 95ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME - 10µs typical Word program time using Buffer Program VFBGA56 (ZB) MEMORY ORGANIZATION 7.7 x 9mm - Multiple Bank Memory Array: 8 Mbit Banks - Parameter Blocks (Top or Bottom location) DUAL OPERATIONS
- ELECTRONIC SIGNATURE - program/erase in one Bank while read in - Manufacturer Code: 20h others - Top Device Code: 88C4h. - No delay between read and write - Bottom Device Code: 88C5h operations BLOCK LOCKING - All blocks locked at power-up - Any combination of blocks can be locked with zero latency - WP for Block Lock-Down - Absolute Write Protection with VPP = VSS SECURITY - 64 bit unique device number - 2112 bit user programmable OTP Cells COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK DataSh ee September 2004 1/82
