P10NK80Z Key Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeability
- Part: P10NK80Z
- Manufacturer: STMicroelectronics (official site)
- Size: 439.75 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| P10NK80ZFP | STP10NK80ZFP |
| P10NK60Z | N-CHANNEL Power MOSFET |
| P10NB50FP | STP10NB50FP |
P10NK80Z Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Internal schematic diagram D(2,TAB) G(1) S(3) AM01476v1...