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STMicroelectronics Electronic Components Datasheet

P11NM60 Datasheet

N-CHANNEL Power MOSFET

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STB11NM60T4, STP11NM60
Datasheet
N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and
TO-220 packages
TAB
TAB
3
1
D2PAK
TO-220
1 23
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
Features
Order codes
VDSS
(@ TJmax)
RDS(on) max.
STB11NM60T4
STP11NM60
650 V
0.45 Ω
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
ID
11 A
Package
D²PAK
TO-220
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the second
generation of MDmesh™ technology. These revolutionary Power MOSFETs
associate a vertical structure to the company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. They are therefore suitable for the most
demanding high-efficiency converters.
Product status link
STB11NM60T4
STP11NM60
Product summary
Order code
STB11NM60T4
Marking
B11NM60
Package
D²PAK
Packing
Tape and reel
Order code
STP11NM60
Marking
P11NM60
Package
TO-220
Packing
Tube
DS3653 - Rev 7 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

P11NM60 Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STB11NM60T4, STP11NM60
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Gate-source voltage
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC= 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt (2)
Peak diode recovery voltage slope
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Value
600
±30
11
7
44
160
15
-65 to 150
Unit
V
V
A
A
W
V/ns
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Rthj-pcb(1) Thermal resistance junction-pcb
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Value
D2PAK
TO-220
0.78
62.5
35
Unit
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
5.5
350
Unit
A
mJ
DS3653 - Rev 7
page 2/21


Part Number P11NM60
Description N-CHANNEL Power MOSFET
Maker STMicroelectronics
Total Page 21 Pages
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