Datasheet Details
| Part number | P4NA80 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 280.30 KB |
| Description | STP4NA80 N-Channel MOS Transistor |
| Download | P4NA80 Download (PDF) |
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| Part number | P4NA80 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 280.30 KB |
| Description | STP4NA80 N-Channel MOS Transistor |
| Download | P4NA80 Download (PDF) |
|
|
|
This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP4NA80 STP4NA80FI 800 800 ± 30 o Unit V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
www.DataSheet4U.com STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI s s s s s s s VDSS 800 V 800 V R DS(on) <3Ω <3Ω ID 4A 2.5 A TYPICAL RDS(on) = 2.
| Part Number | Description |
|---|---|
| P4NA80FI | STP4NA80FI |
| P4NA40F1 | STP4NA40F1 |
| P4NB10 | STP4NB10 |
| P4NB100 | STP4NB100 |
| P4NC60 | STP4NC60 |
| P4NC60FP | STP4NC60FP |
| P4NK60ZFP | STP4NK60ZFP |