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STP6NB50 STP6NB50FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
TYPE STP6NB50 STP6NB50FP
s s s s s
V DSS 500 V 500 V
R DS(on) < 1.5 Ω < 1.5 Ω
ID 5.8 A 3.4 A
TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1 2 3
1 2 3
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
P6NB50FP Datasheet
