Datasheet4U Logo Datasheet4U.com

P7NB60 - STP7NB60FP

Download the P7NB60 datasheet PDF. This datasheet also covers the P7NB60FP variant, as both devices belong to the same stp7nb60fp family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P7NB60FP_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
P7N06 MTP7N06 Motorola Semiconductor
P7N60B HGTP7N60B Intersil Corporation
P7N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
P7N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
P7N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
P7NB60FP STP7NB60FP
P7NB80FP STP7NB80
P7NA40 STP7NA40
P7NC80ZF STP7NC80Z

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω ID 7.2 A 4.1 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.