Datasheet Details
| Part number | P7NB60FP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 143.14 KB |
| Description | STP7NB60FP |
| Download | P7NB60FP Download (PDF) |
|
|
| Part number | P7NB60FP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 143.14 KB |
| Description | STP7NB60FP |
| Download | P7NB60FP Download (PDF) |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P t ot dv/dt( 1) V ISO T stg Tj March 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max.
www.DataSheet4U.com STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω ID 7.2 A 4.1 A TYPICAL RDS(on) = 1.
| Part Number | Description |
|---|---|
| P7NB60 | STP7NB60FP |
| P7NB80FP | STP7NB80 |
| P7NA40 | STP7NA40 |
| P7NC80ZF | STP7NC80Z |