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P7NC80ZF Datasheet - ST Microelectronics

STP7NC80Z

P7NC80ZF Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

P7NC80ZF General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large varie.

P7NC80ZF Datasheet (438.20 KB)

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Datasheet Details

Part number:

P7NC80ZF

Manufacturer:

STMicroelectronics ↗

File Size:

438.20 KB

Description:

Stp7nc80z.
www.DataSheet4U.com STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III .

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