P7N60DD2 transistor equivalent, 600v super junction mos power transistor.
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3 1.Gate 2.Drain 3.Source
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TO-220F-3L
* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
*.
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SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters wi.
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