P7N60FJDD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

P7N60FJDD2 Datasheet Preview — Preview of P7N60FJDD2 PDF

Datasheet Details

Part number	P7N60FJDD2
Manufacturer	Silan Microelectronics
File Size	339.82 KB
Description	600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	P7N60FJDD2-SilanMicroelectronics.pdf

P7N60FJDD2 Product details

Description

2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.It achieves low conduction loss and switching losses.It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies.

Features

1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L.
7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Enhanced avalanche capability.
Extreme dv/dt rated.
High peak current capability 123 TO-220FJD-3L 13 TO-252-2L.

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Published: Oct 25, 2024 |