P7N60FJDD2 Datasheet (Silan Microelectronics) - 600V SUPER JUNCTION MOS POWER TRANSISTOR

P7N60FJDD2, 600V SUPER JUNCTION MOS POWER TRANSISTOR

2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superi

P7N60FJDD2 Features

* 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L

* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 123 TO-220FJD-3L 13 TO-252-2L ORDER