P7N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

Description

Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR .
2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

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Datasheet Specifications

Part number: P7N60FJDD2
Manufacturer: Silan Microelectronics
File Size: 339.82 KB
Datasheet: P7N60FJDD2-SilanMicroelectronics.pdf
Description: 600V SUPER JUNCTION MOS POWER TRANSISTOR

Features

* 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L
* 7A,600V, RDS(on)(typ. )=0.48@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Enhanced avalanche capability
* Extreme dv/dt rated
* High peak current capability 123 TO-220FJD-3L 13 TO-252-2L ORDER

P7N60FJDD2 Distributors

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P7N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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