P7N60DD2

600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

P7N60DD2 Features

* 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L

* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 123 TO-220FJD-3L 13 TO-252-2L ORDER

P7N60DD2 General Description

2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superi.

P7N60DD2 Datasheet (339.82 KB)

P7N60DD2 Datasheet Preview — Preview of P7N60DD2 PDF

Datasheet Details

Part number:

P7N60DD2

Manufacturer:

Silan Microelectronics

File Size:

339.82 KB

Description:

600v super junction mos power transistor.

📁 Related Datasheet

P7N60B HGTP7N60B (Intersil Corporation)

P7N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

P7N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

P7N06 MTP7N06 (Motorola Semiconductor)

P7N80 FQP7N80 (Fairchild Semiconductor)

P7N80C FQP7N80C (Fairchild Semiconductor)

P7NA40 STP7NA40 (ST Microelectronics)

P7NA60 N-Channel MOSFET (STMicroelectronics)

P7NA60FI N-Channel MOSFET (STMicroelectronics)

P7NB60 STP7NB60FP (ST Microelectronics)

TAGS

P7N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

Image Gallery

P7N60DD2 Features

P7N60DD2 General Description

Datasheet Details

File Size:

Description:

P7N60DD2 Distributor