P7N60FD2

600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

P7N60FD2 Features

* 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L

* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 123 TO-220FJD-3L 13 TO-252-2L ORDER

P7N60FD2 General Description

2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superi.

P7N60FD2 Datasheet (339.82 KB)

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Datasheet Details

Part number:

P7N60FD2

Manufacturer:

Silan Microelectronics

File Size:

339.82 KB

Description:

600v super junction mos power transistor.

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P7N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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P7N60FD2 Features

P7N60FD2 General Description

Datasheet Details

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