P7N80C - FQP7N80C

Fairchild Semiconductor

Datasheet Details

Part number	P7N80C
Manufacturer	Fairchild ↗ Semiconductor
File Size	913.18 KB
Description	FQP7N80C
Datasheet	P7N80C_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

6.6A, 800V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
◀ ▲.
G! G DS TO-220 FQP Series GD S www. DataSheet. net/ TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°.

📁 P7N80C Similar Datasheet

P7N06 - MTP7N06 (Motorola Semiconductor)
P7N60B - HGTP7N60B (Intersil Corporation)
P7N60DD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
P7N60FD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
P7N60FJDD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
P7NA40 - STP7NA40 (ST Microelectronics)
P7NA60 - N-Channel MOSFET (STMicroelectronics)
P7NA60FI - N-Channel MOSFET (STMicroelectronics)

Other Datasheets by Fairchild Semiconductor

Published: Nov 30, 2012 |