P7N80C Datasheet (Fairchild Semiconductor)

P7N80C, FQP7N80C

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

P7N80C Features

* 6.6A, 800V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

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* G! G DS TO-220 FQP Series GD S www.DataSheet.ne