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P7N60B

HGTP7N60B

P7N60B Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

P7N60B Datasheet (129.63 KB)

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Datasheet Details

Part number:

P7N60B

Manufacturer:

Intersil Corporation

File Size:

129.63 KB

Description:

Hgtp7n60b.
www.DataSheet4U.com HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 File Number 4412.2 14A, 600V, UFS Series N-Channel IGBTs The HGTD7.

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P7N60B HGTP7N60B Intersil Corporation

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