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P80NF12 - N-CHANNEL Power MOSFET

General Description

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

Key Features

  • Type STP80NF12 VDSS 120 V RDS(on) max < 0.018 Ω ID 80 A.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP80NF12 N-channel 120 V, 0.013 Ω typ., 80 A, STripFET™ II Power MOSFET in a TO-220 package Datasheet - production data TAB 3 2 1 TO-220 Features Type STP80NF12 VDSS 120 V RDS(on) max < 0.018 Ω ID 80 A • Exceptional dv/dt capability • 100% avalanche tested • Application oriented characterization Application • Switching applications Figure 1. Internal schematic diagram ' 7$% *  Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.