Datasheet Details
| Part number | PD20010-E |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 280.01 KB |
| Description | RF Power Transistor |
| Download | PD20010-E Download (PDF) |
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| Part number | PD20010-E |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 280.01 KB |
| Description | RF Power Transistor |
| Download | PD20010-E Download (PDF) |
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The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.
PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs www.datasheet4u.
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