PD54008S-E transistor equivalent, rf power transistor.
* Excellent thermal stability
* Common source configuration
* POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V
* New RF plastic package
Description
The device .
It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity.
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GH.
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