PD55003 Datasheet | STMicroelectronics

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY - EXCELLENT THERMAL STABILITY - MON SOURCE CONFIGURATION - POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V - NEW RF PLASTIC PACKAGE DESCRIPTION The PD55003 is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 12 V in mon source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55003’s superior...