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PD55003S - RF POWER TRANSISTORS

Download the PD55003S datasheet PDF. This datasheet also covers the PD55003 variant, as both devices belong to the same rf power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The PD55003 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12 V in common source mode at frequencies of up to 1 GHz.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PD55003-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD55003 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55003’s superior linearity performance makes it an ideal solution for car mobile radio.