PD55003L-E Datasheet | STMicroelectronics

RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features - Excellent thermal stability - mon source configuration - POUT =3 W mith 17dB gain@500 MHz/12.5 V - New leadless plastic package - ESD protection - Supplied in tape and reel of 3 K units - In pliance with 2002/95/EC european directive Description The PD55003L-E is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial application. It operates at 12 V in mon source mode at frequencies of up to 1 GHz. PD55003L-E boasts the excellent gain, linearity and reliability of STH1LV latest...