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PD55003L-E - RF POWER transistor

General Description

The PD55003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband commercial and industrial application.

It operates at 12 V in common source mode at frequencies of up to 1 GHz.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT =3 W mith 17dB gain@500 MHz/12.5 V.
  • New leadless plastic package.
  • ESD protection.
  • Supplied in tape and reel of 3 K units.
  • In compliance with 2002/95/EC european directive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 17dB gain@500 MHz/12.5 V ■ New leadless plastic package ■ ESD protection ■ Supplied in tape and reel of 3 K units ■ In compliance with 2002/95/EC european directive Description The PD55003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003L-E boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.