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PD55008L-E - RF POWER transistor

General Description

The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications.

It operates at 12V in common source mode at frequencies up to 1GHz.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 8W with 17dB gain @ 500MHz / 12.5V.
  • Integrated ESD protection.
  • New leadless plastic package.
  • Supplied in tape and reel of 3K units.
  • In compliance with 2002/95/EC european directive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD55008L-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ Integrated ESD protection ■ New leadless plastic package ■ Supplied in tape and reel of 3K units ■ In compliance with 2002/95/EC european directive Description The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies up to 1GHz. PD55008L-E boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.