PD55008S-E
PD55008S-E is RF POWER transistor manufactured by STMicroelectronics.
- Part of the PD55008-E comparator family.
- Part of the PD55008-E comparator family.
features
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Excellent thermal stability mon source configuration POUT = 8W with 17d B gain @ 500MHz / 12.5V New RF plastic package
Power SO-10RF (formed lead)
Description
The PD55008 is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 12 V in mon source mode at frequencies up to 1 GHz. PD55008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, Power SO-10RF. PD55008’s superior linearity performance makes it an ideal solution for car mobile radio.
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Power SO-10RF (straight lead)
Pin connection
Source
The Power SO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting remendations are available in .st./rf/ (look for application note AN1294)
Gate
Drain
Order codes
Part number PD55008-E PD55008S-E PD55008TR-E PD55008STR-E Package Power SO-10RF (formed lead) Power SO-10RF (straight lead) Power SO-10RF (formed lead) Power SO-10RF (straight lead) Packing Tube Tube Tape and reel Tape and reel
April 2006
Rev 1
1/28
.st. 28
Contents
PD55008-E, PD55008S-E
Contents
1 Electrical data
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1.1 1.2 Maximum ratings
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- - . . . . 3 Thermal data
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