PD55008-E Datasheet | STMicroelectronics

PD55008-E PD55008S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General Features - - - - Excellent thermal stability mon source configuration POUT = 8W with 17dB gain @ 500MHz / 12.5V New RF plastic package PowerSO-10RF (formed lead) Description The PD55008 is a mon source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 12 V in mon source mode at frequencies up to 1 GHz. PD55008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package,...