PD57002-E Description
The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in mon source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity.
PD57002-E Key Features
- Excellent thermal stability
- mon source configuration
- POUT = 2 W with 15dB gain @ 960 MHz / 28 V
- New RF plastic package