PD57006S-E Description
The device is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band mercial and industrial applications. It operates at 28 V in mon source mode at frequencies of up to 1 GHz.
PD57006S-E Key Features
- Excellent thermal stability
- mon source configuration
- POUT = 6 W with 15dB gain @ 945 MHz / 28 V
- New RF plastic package