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PD84006-E - RF Power Transistor

Description

The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications.

Features

  • Excellent thermal stability Common source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead).

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www.DataSheet4U.com PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications.
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