PD84006L-E Datasheet - ST Microelectronics

RF power transistor

PD84006L-E Features

* Excellent thermal stability Common source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic package ESD protection Supplied in tape and reel In compliance with the 2002/95/EC european directive PowerFLATTM (5mm x 5mm) Descr

PD84006L-E General Description

The PD84006L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz. PD84006L-E’s superior gain and efficiency make.

PD84006L-E Datasheet (332.26 KB)