RF5L08600CB4
RF5L08600CB4 is RF power LDMOS transistor manufactured by STMicroelectronics.
650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
2 5
3 D4E
Pin connection
Pin
Connection
Drain A
Drain B
Source (bottom side)
Gate B
Gate A
Features
Order code
Frequency
POUT
Gain Efficiency
650 MHz
50 V
650 W
19.5 dB
67%
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched pair transistors in push-pull configuration
- Large positive and negative gate-source voltage range for improved class C operation
- Excellent thermal stability, low HCI drift
- In pliance with the european directive 2002/95/EC
Applications
- Wideband lab amplifier from 0.4 to 1 GHz
-...
