* Order code Frequency VDD POUT Gain Efficiency RF5L08600CB4 650 MHz 50 V 650 W 19.5 dB 67%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched pair transistors in push-pull configuration
* Large positive and negativ
RF5L08600CB4 Datasheet (1.98 MB)
RF5L08600CB4
1.98 MB
Rf power ldmos transistor.
RF5L08600CB4 Datasheet 650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B .
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