Datasheet Summary
400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
1 2
5 4 3
B4E
Pin connection
Pin
Connection
Drain A
Drain B
Source (bottom side)
Gate B
Gate A
Features
Order code
Frequency
POUT
Gain
Efficiency
860 MHz
50 V
400 W
19 dB
61%
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched for ease of use
- Large positive and negative gate-source voltage range for improved class C operation
- Excellent thermal stability, low HCI drift
- In pliance with the European Directive 2002/95/EC
Applications...