STMicroelectronics RF5L08350CB4
The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.| Part No. | RF5L08350CB4 |
|---|---|
| Datasheet | RF5L08350CB4 Download |
| Manufacturer |  STMicroelectronics |
| Description | 400W 50V RF Power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD POUT Gain Efficiency RF5L08350CB4 860 MHz 50 V 400 W 19 dB 61%● High efficiency and linear gain operations
● Integrated ESD protection
● Internally matched for ease of use
● Large positive and negative gate-source voltage range for improved class C operation
● Excellent thermal stability, low HCI drift
● In compliance with the European Directive 2002/95/EC
APPLICATIONS
● Wideband lab amplifier from 0.4 to 1 GHz● Digital UHF TV 470-860 MHz
● 650 MHz particle accelerator
● 915 MHz RF energy applications
DESCRIPTION
Product status link RF5L08350CB4 Product summary Order code RF5L08350CB4 Marking 5L08350 Package B4E Packing Tape and reel 13" Base/bulk quantity 120/120 DS13248 - Rev 2 - September 2021 For further information contact your local STMicroelectronics sales office. RF5L08350CB4 Electrical ratings 1 Electrical ratings Symbol V(BR)DSS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2.
