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RF5L08350CB4 Datasheet RF Power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

Product status link RF5L08350CB4 Product summary Order code RF5L08350CB4 Marking 5L08350 Package B4E Packing Tape and reel 13" Base/bulk quantity 120/120 DS13248 - Rev 2 - September 2021 For further information contact your local STMicroelectronics sales office.

www.st.com RF5L08350CB4 Electrical ratings 1 Electrical ratings Symbol V(BR)DSS VGS VDD TSTG TJ Table 1.

Overview

RF5L08350CB4 Datasheet 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor 1 2 5 4 3 B4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L08350CB4 860 MHz 50 V 400 W 19 dB 61%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched for ease of use.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the European Directive 2002/95/EC.

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