RF5L08600CB4 Description
The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz. RF5L08600CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1. ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table.
RF5L08600CB4 Key Features
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched pair transistors in push-pull configuration
- Large positive and negative gate-source voltage range for improved class C
- Excellent thermal stability, low HCI drift
- In pliance with the european directive 2002/95/EC
RF5L08600CB4 Applications
- Wideband lab amplifier from 0.4 to 1 GHz