STMicroelectronics RF5L08600CB4
The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.| Part No. | RF5L08600CB4 |
|---|---|
| Datasheet | RF5L08600CB4 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650W 50V RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code Frequency VDD POUT Gain Efficiency RF5L08600CB4 650 MHz 50 V 650 W 19.5 dB 67%● High efficiency and linear gain operations
● Integrated ESD protection
● Internally matched pair transistors in push-pull configuration
● Large positive and negative gate-source voltage range for improved class C operation
● Excellent thermal stability, low HCI drift
● In compliance with the european directive 2002/95/EC
APPLICATIONS
● Wideband lab amplifier from 0.4 to 1 GHz● Digital UHF TV 470-860 MHz
● 650 MHz particle accelerator
● 915 MHz RF energy applications
DESCRIPTION
Product status link RF5L08600CB4 Product summary Order code RF5L08600CB4 Marking 5L08600 Package D4E Packing Tray Base/bulk quantity 20/100 DS13635 - Rev 2 - May 2021 For further information contact your local STMicroelectronics sales office. RF5L08600CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2.
