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RF5L08600CB4 Datasheet RF power LDMOS transistor

Manufacturer: STMicroelectronics

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General Description

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

Product status link RF5L08600CB4 Product summary Order code RF5L08600CB4 Marking 5L08600 Package D4E Packing Tray Base/bulk quantity 20/100 DS13635 - Rev 2 - May 2021 For further information contact your local STMicroelectronics sales office.

www.st.com RF5L08600CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1.

Overview

RF5L08600CB4 Datasheet 650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate.

Key Features

  • Order code Frequency VDD POUT Gain Efficiency RF5L08600CB4 650 MHz 50 V 650 W 19.5 dB 67%.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Internally matched pair transistors in push-pull configuration.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • Excellent thermal stability, low HCI drift.
  • In compliance with the european directive 2002/95/EC.

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