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RF5L08600CB4
Datasheet
650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
1
2 5
4
3 D4E
Pin connection
Pin
Connection
1
Drain A
2
Drain B
3
Source (bottom side)
4
Gate B
5
Gate A
Features
Order code
Frequency
VDD
POUT
Gain Efficiency
RF5L08600CB4
650 MHz
50 V
650 W
19.5 dB
67%
• High efficiency and linear gain operations • Integrated ESD protection • Internally matched pair transistors in push-pull configuration • Large positive and negative gate-source voltage range for improved class C
operation • Excellent thermal stability, low HCI drift • In compliance with the european directive 2002/95/EC
Applications
• Wideband lab amplifier from 0.
RF5L08600CB4 Datasheet
