SCT025W120G3-4AG Datasheet Automotive-grade Silicon Carbide Power MOSFET

Manufacturer: STMicroelectronics

Overview: SCT025W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ.

Datasheet Details

Part number	SCT025W120G3-4AG
Manufacturer	STMicroelectronics
File Size	504.11 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT025W120G3-4AG-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

The device

Order code SCT025W120G3-4AG VDS 1200 V RDS(on) typ. 27 mΩ ID 56 A HiP247-4 2 34 1 Drain(1, TAB).
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency Gate(4) Driver source(3).

Part Number	Description
SCT025W120G3AG	Automotive-grade silicon carbide Power MOSFET
SCT025H120G3AG	Automotive-grade silicon carbide Power MOSFET
SCT020H120G3AG	Automotive-grade silicon carbide Power MOSFET
SCT020HU120G3AG	Automotive-grade silicon carbide Power MOSFET
SCT020W120G3-4AG	Automotive-grade silicon carbide Power MOSFET
SCT027H65G3AG	Automotive-grade silicon carbide Power MOSFET
SCT027TO65G3	650V 60A Silicon carbide Power MOSFET
SCT027W65G3-4AG	Automotive-grade silicon carbide Power MOSFET
SCT011H75G3AG	Automotive-grade silicon carbide Power MOSFET
SCT012H90G3AG	Automotive-grade silicon carbide Power MOSFET