STMicroelectronics SCT025W120G3AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.| Part No. | SCT025W120G3AG |
|---|---|
| Datasheet | SCT025W120G3AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code SCT025W120G3AG VDS 1200 V RDS(on) typ. 27 mΩ ID 56 A HiP247 3 2 1 D(2, TAB)● AEC-Q101 qualified
● Very low RDS(on) over the entire temperature range
● High speed switching performances
● Very fast and robust intrinsic body diode
● Very high operating junction temperature capability (TJ = 200 °C)
APPLICATIONS
● Main inverter (electric traction)● DC/DC converter for EV/HEV G(1)
● On board charger (OBC)
DESCRIPTION
S(3) AM01475v1_noZen Product status link SCT025W120G3AG Product summary Order code SCT025W120G3AG Marking 25W120G3AG Package HiP247 Packing Tube DS14586 - Rev 1 - January 2024 For further information contact your local STMicroelectronics sales office. SCT025W120G3AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime Drain current (continuous) at TC =...
