STMicroelectronics SCT025W120G3-4AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.| Part No. | SCT025W120G3-4AG |
|---|---|
| Datasheet | SCT025W120G3-4AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code SCT025W120G3-4AG VDS 1200 V RDS(on) typ. 27 mΩ ID 56 A HiP247-4 2 34 1 Drain(1, TAB)● AEC-Q101 qualified
● Very low RDS(on) over the entire temperature range
● High speed switching performances
● Very fast and robust intrinsic body diode
● Very high operating junction temperature capability (TJ = 200 °C)
● Source sensing pin for increased efficiency Gate(4) Driver source(3)
APPLICATIONS
Power source(2) ND1TPS2DS3G4● Main inverter (electric traction)
● DC/DC converter for EV/HEV
● On board charger (OBC)
DESCRIPTION
Product status link SCT025W120G3-4AG Product summary Order code SCT025W120G3-4AG Marking 25W120G3-4AG Package HiP247-4 Packing Tube DS14279 - Rev 2 - March 2024 For further information contact your local STMicroelectronics sales office. SCT025W120G3-4AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Gate-source t...
