Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
Features
- Order code SCT025W120G3-4AG
VDS 1200 V
RDS(on) typ. 27 mΩ
ID 56 A
HiP247-4
2 34 1
Drain(1, TAB).
- AEC-Q101 qualified.
- Very low RDS(on) over the entire temperature range.
- High speed switching performances.
- Very fast and robust intrinsic body diode.
- Very high operating junction temperature capability (TJ = 200 °C).
- Source sensing pin for increased efficiency
Gate(4) Driver
source(3).
SCT025W120G3-4AG Datasheet
