SCT025W120G3AG
Features
Order code SCT025W120G3AG
VDS 1200 V
RDS(on) typ. 27 mΩ
ID 56 A
Hi P247
3 2 1
D(2, TAB)
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
G(1)
- On board charger (OBC)
Description
S(3)
AM01475v1_no Zen
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Product status link SCT025W120G3AG
Product summary
Order code
Marking
25W120G3AG
Package
Hi P247
Packing
Tube
DS14586
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