| Title | SiC MOSFETs |
| Description | S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.... |
| Features |
Order code SCT025W120G3AG
VDS 1200 V
RDS(on) typ. 27 mΩ
ID 56 A
HiP247
3 2 1
D(2, TAB)
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) Applications • Main inverte... |
| Datasheet |
 SCT025W120G3AG Datasheet - 489.01KB |
| Distributor |
Mouser Electronics |
| Stock | 0 In stock |
| Price |
1 units: 22.6 USD 10 units: 20.09 USD 25 units: 18.74 USD 50 units: 18.15 USD 100 units: 17.57 USD 250 units: 16.4 USD
|
| BuyNow |
 No Longer Stocked - Manufacturer a STMicroelectronics SCT025W120G3AG
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
Mouser Electronics |
1 units: 22.6 USD 10 units: 20.09 USD 25 units: 18.74 USD 50 units: 18.15 USD 100 units: 17.57 USD 250 units: 16.4 USD |
||
 STMicroelectronics |
1 units: 22.15 USD 10 units: 19.69 USD 25 units: 18.37 USD 50 units: 17.79 USD 100 units: 17.22 USD 250 units: 16.07 USD |
BuyNow |
|
 Future Electronics |
600 units: 16.08 USD |
BuyNow |
|
 Avnet Americas |
60000 units: 15.138 USD 6000 units: 15.486 USD 4800 units: 15.834 USD 3600 units: 16.182 USD 2400 units: 16.53 USD 1200 units: 16.878 USD 600 units: 17.226 USD |
BuyNow |
|
 Avnet Silica |
No price available |
BuyNow |
