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SCT025W120G3AG - Automotive-grade silicon carbide Power MOSFET

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Features

  • Order code SCT025W120G3AG VDS 1200 V RDS(on) typ. 27 mΩ ID 56 A HiP247 3 2 1 D(2, TAB).
  • AEC-Q101 qualified.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Very fast and robust intrinsic body diode.
  • Very high operating junction temperature capability (TJ = 200 °C).

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SCT025W120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package Features Order code SCT025W120G3AG VDS 1200 V RDS(on) typ. 27 mΩ ID 56 A HiP247 3 2 1 D(2, TAB) • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV G(1) • On board charger (OBC) Description S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
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