Datasheet Summary
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package
Features
Order code SCT025W120G3AG
VDS 1200 V
RDS(on) typ. 27 mΩ
ID 56 A
HiP247
3 2 1
D(2, TAB)
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
G(1)
- On board charger (OBC)
Description
S(3)
AM01475v1_noZen
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd...