SCT10N120 Datasheet | STMicroelectronics

Silicon carbide Power MOSFET 1200 V, 500 mΩ typ., 12 A in an Hi P247 package Features Hi P247 3 2 1 D(2, TAB) - Very low RDS(on) over the entire temperature range - Very high operating junction temperature capability (TJ = 200 °C) - Very fast and robust intrinsic body diode - Low capacitance Applications - AC-DC converters - DC-DC converters - Motor drives - Solar inverters (string and central) - Uninterruptable power supplies (UPS) G(1) S(3) Description AM01475v1_no Zen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Si C material, bined with the device’s housing in the proprietary Hi P247 package, allows designers to use an industrystandard outline with significantly improved thermal capability. These Features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT10N120 Product summary Order code Marking Package Hi P247 Packing Tube DS10954 - Rev 4 - March 2025 For further information, contact your local STMicroelectronics sales...