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SCT10N120 Datasheet

Silicon carbide Power MOSFET

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SCT10N120
Datasheet
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ
(typ., TJ = 150 °C) in an HiP247™ package
3
2
1
HiP247™
D(2, TAB)
Features
• Very tight variation of on-resistance vs. temperature
• Very high operating junction temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
Applications
• Solar inverters, UPS
• Motor drives
• High voltage DC-DC converters
• Switch mode power supplies
G(1) Description
S(3)
AM01475v1_noZen
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative
properties of wide bandgap materials. This results in unsurpassed on-resistance per
unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material, combined with the device’s
housing in the proprietary HiP247™ package, allows designers to use an industry-
standard outline with significantly improved thermal capability. These features render
the device perfectly suitable for high-efficiency and high power density applications.
Product status link
SCT10N120
Product summary
Order code
SCT10N120
Marking
SCT10N120
Package
HiP247™
Packing
Tube
The device meets ECOPACK
standards, an environmentally-friendly
grade of products commonly referred
to as “halogen-free”.
DS10954 - Rev 3 - March 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

SCT10N120 Datasheet

Silicon carbide Power MOSFET

No Preview Available !

1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width limited by safe operating area.
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
SCT10N120
Electrical ratings
Value
1200
-10 to 25
12
10
24
150
-55 to 200
Unit
V
V
A
A
A
W
°C
°C
Value
1.17
40
Unit
°C/W
°C/W
DS10954 - Rev 3
page 2/13


Part Number SCT10N120
Description Silicon carbide Power MOSFET
Maker STMicroelectronics
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SCT10N120 Datasheet PDF






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