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SCT10N120 Datasheet 1200V 12A Silicon carbide Power MOSFET

Manufacturer: STMicroelectronics

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General Description

AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industrystandard outline with significantly improved thermal capability.

Overview

SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 500 mΩ typ.

Key Features

  • HiP247 3 2 1 D(2, TAB).
  • Very low RDS(on) over the entire temperature range.
  • Very high operating junction temperature capability (TJ = 200 °C).
  • Very fast and robust intrinsic body diode.
  • Low capacitance.

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