Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ
(typ., TJ = 150 °C) in an HiP247™ package
• Very tight variation of on-resistance vs. temperature
• Very high operating junction temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
• Solar inverters, UPS
• Motor drives
• High voltage DC-DC converters
• Switch mode power supplies
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative
properties of wide bandgap materials. This results in unsurpassed on-resistance per
unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material, combined with the device’s
housing in the proprietary HiP247™ package, allows designers to use an industry-
standard outline with significantly improved thermal capability. These features render
the device perfectly suitable for high-efficiency and high power density applications.
Product status link
The device meets ECOPACK
standards, an environmentally-friendly
grade of products commonly referred
to as “halogen-free”.
DS10954 - Rev 3 - March 2018
For further information contact your local STMicroelectronics sales office.