SCT10N120
Overview
AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
- Very low RDS(on) over the entire temperature range
- Very high operating junction temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
