SCT10N120 Datasheet - STMicroelectronics

Silicon carbide Power MOSFET

SCT10N120 Features

* Very tight variation of on-resistance vs. temperature

* Very high operating junction temperature capability (TJ = 200 °C)

* Very fast and robust intrinsic body diode

* Low capacitance Applications

* Solar inverters, UPS

* Motor drives

* High

SCT10N120 General Description

S(3) AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal prope.

SCT10N120 Datasheet (232.26 KB)